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The electrical and photovoltaic properties of the nanostructure ZnO/p-Si diode have been investigated. The nanostructure ZnO/p-Si diode was fabricated using sol–gel spin coating method. The ideality factor and barrier height of the diode were found to be 3.18 and 0.78eV, respectively. The obtained n ideality factor is higher than 2, indicating that the diode exhibits a non-ideal behavior due to the...
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