The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Multilayer thin films of ZnSe/Mn diluted magnetic semiconductor have been physically deposited onto a glass substrate using thermal evaporation technique and vacuum annealed at 333 K for 1 h at base pressure of 10 −5 Torr. These thin films have been hydrogenated at different pressures (15–45 psi) for half an hour at room temperature. Hydrogenation process has been performed for as- grown...
The track-etched polymeric membranes have higher permeability for hydrogen as well as carbon dioxide. In present work, we have deposited thin film of Ti having thickness 100–150nm on polymer membrane surface using vacuum evaporation method under 10 −6 Torr for filling the tracks by the Ti metal. The gas permeability of Ti-deposited membrane is modified because Ti has close affinity for hydrogen...
MeV energy ion-implantation induced modifications in simple binary glass As 2 Se 3 have been monitored by de conductivity measurements. The study testifies that the process of ion-implantation at MeV energy is a novel technique in modifying the electronic properties of semiconductors. Ni ion seems to have more drastic changes than Ag and Ge ions. As small a dose of 75 MeV Ni ions as...
The phenomenon of resist debris (RD) formation in electron beam lithography (EBL) under various conditions of proximity exposure (PE) effect is discussed. It is found that the PE correction at the preferred resist plane together with adequate beam to beam spacing can provide stable and uniformly distributed RD over the exposed pattern area. As an application of such stable and uniformly-distributed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.