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We evaluated the electrical properties and change of nanostructure of Cu doped SiO2 and Ge2Sb2Te5 (GST) thin film under electrical stressing. Specialized scanning tunneling microscopy (STM)-transmission electron microscope (TEM) holder, which allows us to do the electrical characterization and observation of in-situ nano-structural evolution simultaneously, used as a approach method to confirm the...
Passivation and adhesion layers for Cu have been formed by nitridation of Cu(90 nm)/Ti(20 nm)/SiO 2 (90 nm) bilayers and 163 nm thick Cu(Ti 27 at.%) alloys at 400-700°C for 30 min in an ammonia ambient. In both systems Ti segregated during annealing to the free surface to react with the NH 3 and formed an oxygen-rich Ti nitride passivation layer. The thickness of these layers was ∼12...
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