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The thermal damage process of gallium arsenide (GaAs) induced by 532nm continuous laser is presented in this work. The surface damage in the form of decomposing was detected and determined previous to the melting damage by the real-time observation of surface reflectivity. The evaporation of As induced the decrease of As content in the irradiated surface. The microscopic morphology and composition...
In this article, the properties of the intrinsic and doped Si AlGaInP surfaces are investigated by the ellipsometry. The results show that the oxide films on AlGaInP are thicker than those on common semiconductors, and have small absorption in visible light range. Moreover, the growth rates of oxide film on AlGaInP exposed to room air are obtained by the null ellipsometry, and plots of thickness vs...
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