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AlGaN/GaN superlattice structures have been deposited on (0001) ZnO substrates by metalorganic vapor phase epitaxy. The growth conditions were first optimized on GaN templates using N 2 as carrier gas at relatively low temperature (<800°C), which is suitable for GaN growth on a ZnO substrate. Experimental results show that high interfacial quality can be achieved in the superlattice by...
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