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Nitrogen incorporation into GaAs epilayers has received interest especially due to band gap decreasing of resultant material. Small fraction of nitrogen makes GaAs1-xNx useful material for optoelectronic devices grown on GaAs substrates. However, achieving high quality of GaAs1-xNx/GaAs heterostructures requires MBE (Molecular Beam Epitaxy) or LP-MOVPE (low pressure-metalorganic vapour phase epitaxy)...
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