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W artykule omówiono wybrane badania struktur na SiC, przeprowadzone w ramach realizacji projektu InTechFun. Wymagały one zastosowania kompleksu zaawansowanych metod optycznych, fotoelektrycznych i elektrycznych, które pozwoliły na ujawnienie własności strukturalnych kontaktów krzemkowych do SiC oraz wpływu mikro-naprężeń mechanicznych w bramce na niektóre parametry kondensatorów MOS na węgliku krzemu...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.