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A new method of activating the backside Emitter of an IGBT or a freewheeling Diode will be introduced. A high power UV Laser is used to activate a 1, 5 cm × 1, 5 cm area with one single laser shot. This allows a process improvement for thin wafer for IGBT and Diodes in the 600 V - 1200 V range. The process is a major step in further shrinking the device thickness and thereby reducing the on state...
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