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Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10^{17} cm^{-3} for the layer and about 5 × 10^{19} cm^{-3} for the bulk crystal. The experiments revealed a different position of the absorption edge...
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