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Properties of carrier-induced ferromagnetism in modulation-doped quantum wells of p-type (Cd,Mn)Te are studied by photoluminescence and reflectivity in magnetic field. Valence-band engineering can strongly modify the magnetic properties of a system of localized spins interacting via a 2D hole gas. This is obtained through a strain control of the light-hole (lh)/ heavy-hole (hh) splitting. The axis...
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