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Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi4Ti4O15 grown on Bi4Ti3O12, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO2/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively,...
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