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The AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on the (0001) HVPE bulk GaN substrates using plasma-assisted molecular-beam epitaxy (PAMBE). The AlGaN layers of 12% or 21% Al were grown to nominal 20nm thickness after which the 3nm thick GaN cap was added. High-resolution X-ray diffraction (HRXRD) and TEM measurements were used to determine crystallographic quality, composition...
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