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For the first time a full hybrid integration scheme is proposed, allowing a full circuit design transfer from 28nm Bulk CMOS high-k/metal gate onto UTBB FDSOI with minimum design effort. As the performance of FDSOI logic and SRAM devices have already been reported, this paper highlights the original way to integrate ESD devices, variable MOS capacitors and vertical bipolar transistor within the frame...
For the first time, CMOS devices on UTBOX 25nm combined with strained SOI (sSOI) substrates have been demonstrated. A 20% Ion boost is highlighted with these substrates compared to the standard UTBB SOI ones. Performance up to 1530µA/µm @ Ioff=100nA/µm (Vd 1V) for a nominal Lg=30nm with a CET of 1.5nm for the NMOS has been achieved. The viability of this substrate has been demonstrated thanks to our...
The objective of this paper is to present the successful co-integration of Logic Ultra-Thin Body and Box (UTBB) devices and bulk-Si I/O devices on the same chip. The UTBB transistors are integrated locally on a Bulk wafer with the Localized Silicon On Insulator (LSOI) process technology with HfO2/TiN gate stack for low power applications. I/O co-integrated Bulk devices have a thicker interfacial SiO...
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