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Hydrogen gettering and its out-diffusion from implantation-disturbed buried layers formed in oxygen-implanted silicon, annealed and subsequently treated in hydrogen plasma, have been investigated. Energy and doses of implanted oxygen ions were 200keV and 1×10 17 cm −2 , respectively. After implantation Si:O samples were annealed at up to 1573K, also under enhanced hydrostatic pressure,...
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