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We have investigated growth mechanisms of GaN on Si (111) by pulsed laser deposition (PLD) using reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). We have found that the use of the AlN buffer layer dramatically improves the crystal quality of GaN. RHEED observations have shown that the epitaxial growth of the buffer layer starts with a two-dimensional...
We have grown aluminum nitride (AlN) on LSAT substrates for the first time using laser MBE and investigated its growth mechanism. It has turned out that surfaces of LSAT substrates become atomically flat by annealing in a UHV chamber. Reflection high energy electron diffraction observations and AFM measurements have shown that the growth of the AlN film starts with two-dimensional amorphous growth...
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