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The paper presents the results on investigations of heterojunction of nanocrystalline AlN layers of p-type with n-type Si. The layers were produced with the impulse plasma assisted MO CVD at 300 K. The heterostructures exhibited the photovoltaic effect with the enlarged spectral quantum efficiency as well as good rectifying and electroluminescence properties.
The spraying method is based on the nitrogen impulse plasma treating of commercial AIN powder contaminated with oxygen. The powder is introduced into an impulse plasma accelerator in which electric discharge occurs under 100 Pa pressure. The plasma packed thus produced is nonisothermic and entirely ionzed. The energy relased in one 100 μs impulse is 1 kJ. As a result of the plasma - chemical treatment...
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