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Floating-base InGaP/GaAs heterojunction phototransistors (HPTs) with low doped extrinsic base region are demonstrated. Electrical and optical characteristics of the fabricated HPTs with and without SiNx passivation are investigated. Moreover, the optical gain of these HPTs is compared in terms of variation of the emitter size. The SiNx passivated HPTs with 50×50 μm2 of emitter size showed the superior...
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