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Integrated semiconductor ring lasers with 1-cm cavity length are fabricated and characterized. Directional switching is observed and a pumped S-section is used to suppress it. The lasing threshold is identified by differential I-V measurements.
Summary form only given. In this work, a theoretical analysis is performed of GaN spontaneous emission and gain spectra and of radiative recombination rate in function of excess carrier density N. Contribution of nonradiative recombination in published photopumping data is estimated. A nonparabolic band model is used with several values of electron and hole effective masses and intraband relaxation...
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