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We demonstrate a novel structure of a electroabsorption modulator (EAM) at a 1.55-mum wavelength. By incorporating the epilayer structure of dual-depletion-region EAM with an evanescently coupled optical waveguide, the demonstrated device can achieve low electrical return loss (-20 dB at ~60 GHz), wide 3-dB bandwidth (60 GHz) of electrical transmission loss, wide electrical-to-optical bandwidth (45...
State-of-the-art performance: high responsivity (1.04 A/W), wide bandwidth (~50 GHz), and high saturation current-bandwidth product (over 1280 mA-GHz/40 GHz), of near-ballistic uni-traveling-carrier photodiode can be attributed to near-ballistic transport and ac capacitance reduction, which has been verified by our measurement and device-modeling
We demonstrate a novel electro-absorption modulator, which can not only release the trade-off between driving-voltage and bandwidth but also the burden imposed on downscaling size of high-speed EAM. The electrical-to-optical measurement show very convincing results
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