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The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1‐xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable and reversible changes in the electronic, optical, structural, and electrical properties of these materials. The highly trapping‐limited diffusion of H atoms in dilute nitrides results in the formation of extremely sharp...
A novel nanofabrication method based on nitrogen passivation by hydrogen in GaAsN is presented. This approach combines a masked hydrogenation process with a very sharp H forefront in GaAsN. This allows embedding a GaAsN nanometer‐sized region in a GaAs barrier, resulting in the formation of ordered arrays of nanoemitters with marked zero‐dimensional spectroscopic characteristics.
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