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It was previously shown that the effective contact potential difference (φ MS ) in Al–SiO 2 –Si metal-oxide-semiconductor structures has a “dome-like” shape of distribution over the Al-gate area. In this paper we show that this shape is due to the distribution of the barrier height at the Al–SiO 2 interface and that the characteristic shape of φ MS (x,y) distribution...
The local value distributions of the effective contact potential difference (ECPD or the phi MS factor) over the gate area of Al-SiO2-Si structures were investigated for the first time. A modification of the photoelectric phi MS measurement method was developed, which allows determination of local values of this parameter in different parts of metaloxide-semiconductor (MOS) structures. It was found...
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