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The theoretical approach towards improving the photovoltaic response of n-ZnO/p-Si heterojunctions proposed by Knutsen et al. [Phys. Status Solidi A 210 (2013) 585–588] has been experimentally tested. AZO/n-Zn(1−x)MgxO layers were deposited at 160°C on p-Si substrates by atomic layer deposition (ALD) with magnesium concentration in the 0–4at% range. The examined devices showed a reduction of the conduction...
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