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1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
A high output power and high efficiency power amplifier (PA) is designed for 60 GHz wireless point-to-point communication using IBM 90 nm CMOS process. A high efficiency is achieved through the utilization of cascode structure with floating n-well and differential inductor to resonate out the parasitic capacitances. To further boost the output power, four PA units are combined together through power...
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