The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A fully back-end process for high-aspect ratio (HAR) Through Silicon Vias (TSVs) for 3D smart sensor systems where the sensors and the electronics are fabricated on the opposite sides of the wafer, is developed. Atomic Layer Deposition (ALD) of TiN provides a highly conformal barrier as well as a seed layer for metal plating. Cu electro-less plating on the chemically activated TiN surfaces is applied...
RuAl and NiAl thin films on were oxidized, and the results were compared to those from aluminum, ruthenium, and nickel films. Both aluminides are more oxidation resistant than nickel, aluminum, and ruthenium, and they form an outer layer of alumina after oxidation to 850 . The depth profiles differ for NiAl and RuAl, with alternating layers of alumina and a...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.