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We present some recent results obtained by our team in rare earth doped photonic glasses and confined structures, in order to give some highlights regarding the state of art in glass photonics. To evidence the unique properties of transparent glass ceramics we compare spectroscopic and structural properties between the parent glass and the glass ceramics. Starting from planar waveguides we move to...
The immense growth of the Internet which is accompanied by the emergence of new communication technologies, applications, and devices, results in the evolution from voice-centric toward data-centric optical networks. In this paper we overview some of the trends in optical packet networking and identify several related research problems. Our particular focus is on the network layer aspects of future...
An optical model of a surface-normal electro-absorption (EA) modulator consisting of multiple-quantum wells (MQWs) embedded in an asymmetric Fabry-Perot (FP) cavity formed by high-reflective back DBR and moderate-reflective top DBR separated from MQWs at both sides by buffer layers is analysed numerically by the method of single expression (MSE). Reflectance of the modulator versus normalised thickness...
The emerging area of sub-wavelength photonics aims at integrating photonics with nanotechnology and achieving functionalities of a substantial novelty. Nevertheless, our understanding of the interplay between light and nanostructured matter is still incomplete, and full integration of light with nanoscale devices and processes, as well as dynamic and all-optical control of such structures, requires...
The physics and technology of sub-wavelength structured optical materials such as photonic crystals, patterned metallic films and, more generally, artificial optical materials, such as metamaterials (i.e. structured materials with new characteristics obtained by combining materials properties and geometrical patterning), offer novel phenomena and applications over and above classical integrated optics...
An optical model of a transmission-type vertical-cavity electro-absorption modulator (EA) on Si/SiO2 for highspeed intra/inter-chip interconnects is developed and analysed by the method of single expression (MSE). As an external radiation source a wideband light source is suggested for avoiding the problem of usage of Si emitter. Transmission properties of symmetrical structure of a modulator consisting...
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