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The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under...
The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with Ne^{+}, Al^{+}, Ar^{+}, or In^{+} ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence...
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