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This work describes a lumped-element balun for use in a miniature, coplanar waveguide frequency tripler pseudomorphic high electron mobility transistor microwave monolithic integrated circuit. The measurement results of the balun show a 1-dB gain balance and a 10 degrees phase balance from 11.6 to 13 GHz. It was used in the design of a 36-GHz monolithic tripler at the input port. A resonant inductor...
A fully integrated active Gilbert cell mixer with inductor resonator was proposed in this paper. The proposed circuit was designed at 12 GHz with bandwidth from 5 to 20 GHz and fabricated in a 0.5-μm pHEMT process. An extra inductor was added to enhance the conversion gain and improve the noise figure. The “current bleeding” technique was also inserted in the Gilbert cell mixer to boost the conversion...
This paper presents the multi-band inductor with 0.18 μm CMOS technology on plastic achieves high Q-factor and small size for multiband applications. The multi-band inductor on VLSI-standard Si Substrate is operated at ultra-wide band range. The operation frequencies are near 3 GHz, 4 GHz, 7.5 GHz and 9 GHz of the Q-factor are 6.5, 6.7, 8 and 11.5 with the inductance 2.1, 1.6, 1.1, 0.6 nH, respectively...
A dumbbell shaped defected ground structure (DGS) RF choke is proposed for UWB broadband RF choke design. The special feature of the design is to use Chebyshev modulated DGS elements to adjust the frequency bandwidth of rejection band of a designed low pass filter. It fits very well to cover the 3.1 to 10.6 GHz UWB band with 15 dB rejection throughout the band. It is suitable for MMIC active module...
Parallel dimming for reducing the intensity of high power light-emitting diode (HP-LED) is an effective way of achieving high contrast ratio and wide dimming range. However the scheme has limitation due to response of control loop and higher power dissipation due to losses during turn-off period. Therefore shorting-inductor approach is proposed in this paper which is capable of achieving improvement...
High power light-emitting diode (HP-LED) is now commonly used in electronic devices. However due to its unique electrical characteristics, it places many obstacles on maximizing the benefits provided by HP-LED. One of the obstacles is the rise of junction temperature due to current ripple that is inherent in all switching power supply. This affects the performance of HP-LED such as wavelength, luminance...
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