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The grazing incidence X-ray reflectivity (GIXR) curves recorded from two sets of Si(111) samples implanted with As + ions of energy 80 keV with a number of doses above the amorphization limit are reported. The first, ‘clean’ set of samples, was implanted in ultra high and clean vacuum to avoid contamination. The second, ‘contaminated’ set, was implanted under less rigorous conditions, and...
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