The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. However, the device/process/integration technologies of Ge/III-V n- and pMOSFETs for satisfying requirements of future node MOSFETs have not been established yet. In this paper,...
HfO2/Al2O3/GeOx/Ge gate stacks were fabricated by applying the plasma post oxidation to HfO2/Al2O3/Ge structures. These Ge gate stack are shown to simultaneously realize both ultrathin EOT of ∼0.7 nm and low Dit of 1011 cm−2eV−1 order. The superior operation of (100) Ge pMOSFETs with these gate stacks has been demonstrated with record high hole mobility of 596 cm2/Vs under ∼0.8 nm EOT among the Ge...
A novel plasma post oxidation method has been proposed to form an Al2O3/GeOx/Ge gate stack by using oxygen plasma through a thin ALD Al2O3 layer. This Ge gate stack is shown to simultaneously realize both thin EOT of ∼1 nm and low Dit of <1011 cm−2eV−1. Ge pMOSFETs, fabricated by employing this method, have demonstrated superior device operation with high hole mobilities of 437, 526 and 345...
We have successfully demonstrated the CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate, by using direct wafer bonding (DWB), for the first time. Ni-based metal S/D allows us to fabricate high performance nMOSFETs and pMOSFETs simultaneously at the single-step S/D formation process. The fabricated InGaAs nMOSFET and Ge...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.