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A novel plasma post oxidation method has been proposed to form an Al2O3/GeOx/Ge gate stack by using oxygen plasma through a thin ALD Al2O3 layer. This Ge gate stack is shown to simultaneously realize both thin EOT of ∼1 nm and low Dit of <1011 cm−2eV−1. Ge pMOSFETs, fabricated by employing this method, have demonstrated superior device operation with high hole mobilities of 437, 526 and 345...
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