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An ultrathin HfO2/Al2O3/GeOx gate stack has been fabricated on strained-Ge surfaces using the plasma post oxidation method. It is found that the strained-Ge MOS interface can be sufficiently passivated by inserting a 0.35-nm-thick GeOx interfacial layer, with a low Dit at 1011 cm−2eV−1 level. A peak hole mobility of 552 cm2/Vs and 2.2× enhancement of high field mobility (Ns=1013 cm−2) over unstrained-Ge...
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