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Carbon-doped GaAs (GaAs:C) samples were grown using carbon tetrabromide (CBr 4 ) as p-type dopant in a solid source molecular beam epitaxy (SSMBE) system. The effects of CBr 4 flux, substrate temperature and growth rate were systematically studied. High CBr 4 flux exceeding 2.6x10 -7 Torr and substrate temperature exceeding 620 o C were found to induce...
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