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One promising application of CNTs in microelectronics is to use vertically aligned CNT (VACNT) arrays as novel thermal interface materials (TIMs). No doubt that the vertical alignment makes the best of the extremely high longitudinal thermal conductivity of individual CNTs; however, it is the CNT/substrate interface that exerts the main restriction on phonon transport through a TIM layer. There are...
By using chemical vapor deposition method, 4H-SiC films have been grown on AlN/Si(100) complex substrates at the temperature below 1100 °C. Substitutional Al and N are found in the SiC film. Photoluminescence (PL) peaks, related to Al acceptor and N shallow donor, respectively, have been observed at the room-temperature. The higher partial pressure ratio of SiH 4 and C 2 H 4 ...
Indium nitride (InN) films have been deposited on sapphire substrates at 350–500 °C using low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Increasing the growth temperature changes the structure of InN from cubic to hexagonal. At 500 °C, no InN can be grown on sapphire due to its decomposition. The X-ray diffraction (XRD) spectra of InN films show that the diffractions from In(101)...
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