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The frequency dependence of capacitance-voltage (C-V) characteristics of Hg/GaN and Hg/InGaN/GaN Schottky contacts are investigated for 1KHz, 10KHz and 1MHz at room temperature. An anomalous peak in the C-V curves of Hg/GaN sample is observed but no peak for the Hg/InGaN/GaN sample occurs. The interface states, series resistance and minority-carrier injection would be the origin of this anomalous...
In the advanced Low Power (LP) CMOS technology nodes gate-to-source/drain overlap capacitance (COV), gate-to-contact capacitance (CCO) and gate sidewall fringe capacitance (Cf) have become increasingly important component(s) of transistor parasitic. Accurate extraction and modeling of these parasitic are essential in accurate estimation of circuit performance. In this paper we describe test structure...
Twisted direct silicon bonded (DSB) substrate demonstrates a higher hole mobility advantage over (110) bulk substrate for PFET. The mobility shows a (110) layer thickness dependence with the thinner DSB layer having a higher hole mobility. 25% on-current improvement is obtained for thin DSB PFETs at long channel (Lg= 2 mum), 10% higher at short channel (Lg = 36 nm) compared to (110) bulk PFETs. Moreover,...
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