The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports the use of dual-microcantilevers coupled by cruciform overhang to enhance the mass sensitivity for minor mass detection. Driven by a piezoactuator in air, each cantilever of the structure can resonate in two different modes (in-phase and out-of-phase modes), and the resonant amplitude-ratios are compared before and after a mass adding. Using this sensing strategy, the cross-shaped...
The objective of this paper is to show how stretchable conductive composites can be utilized for the fabrication of ultra-low cost stretchable RF devices. We show a method to produce biocompatible highly conductive stretchable silicone composites via an in-situ nanoparticle formation and sintering process. Furthermore, we develop a simple, low cost, processing technique to fabricate stretchable RF...
Wafer-scaled cost-effective technique for subwavelength structured (SWS) surface by means of anodic porous alumina masks directly formed on SiO2/Si substrates is demonstrated. Combined with ion beam etching and induced coupled plasma etching, SWS surface with a period of 100nm and a height of 200-300nm was achieved on 2 inch polished single crystalline Si wafer. A lower reflectivity below 6% was observed...
The performances of InGaN Schottky photodetectors with varied fabrication processes were investigated. The photoresponse and dark current of InGaN Schottky photodetectors can be obviously improved by inserting a thin Si3N4 passivation layer between the InGaN layer and the Schottky metal. Furthermore, a mesa process gives not only a further increase in the photoresponse but also a pronounced reduction...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.