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We designed and fabricated the AlGaN/GaN HFETs with step graded heterostructure in this work. Compared with the AlGaN/GaN HFETs with linearly graded layer, the AlGaN/GaN HFETs with step graded layer exhibited similar device performance, including the notable wide flat transconductance characteristics. For the AlGaN/GaN step graded heterostructure, each step layer is individual and can be controlled...
In this letter, a first study on phosphate detection based on AlInN/GaN high electron mobility transistors (HEMTs) is presented. The ungated regions of GaN HEMT-based sensors were functionalized with the phosphate ion-imprinted polymer and their sensing behaviors were analyzed by detecting different concentrations of phosphate solutions. The results show that the AlInN/GaN sensor exhibits an ultrasensitive...
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