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Summary form only given. The quantum efficiency of negative electron affinity (NEA) GaAs photocathodes mainly depends on the performance of GaAs material. Usually, the uniform-doping structure are used in the photoemissive layer of cathodes. To increase quantum efficiency of cathodes, the varied-doping structure are used. The quantum efficiency can be increased by using the varied-doping structure...
To study the effect surface defects imposed on NEA GaAs photocathode, a surface analysis instrument shown in Fig. 1 has been designed, which is composed of a microimager, a 2-D displacement platform, an auto-focus equipment, a computer.
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