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This work presents low-temperature growth of GaN films on GaAs(100) substrates by radio frequency nitrogen hot plasma with power up to 5 kW. This nitrogen hot plasma provides abundant nitrogen atoms as nitrogen source for growth of GaN films which results in a growth rate as high as 4 μm/h. In addition, for the first time, GaN films can be grown at room temperature by using only triethylgallium as...
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