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The results of a new method of high-kappa dielectric formation are reported. For effective oxide thickness of 0.39 nm, the leakage current density of metal-high-kappa-silicon structure is about 1 times 10-12 A/cm2 for gate voltage from +3 to -3 V. The descriptive statistics and process variation data presented demonstrate that the process is robust and manufacturing tools can be developed without...
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