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The samples of carbon-rich silicon carbide (C–SiC) films were prepared by using ion beam mixing. Some were initial-annealed at 673K in vacuum and the others were untreated for comparison. After that, all samples were irradiated by 5keV hydrogen ion beam and isothermally post-annealed at the temperature from 473 to 873K. Depth distributions of hydrogen obtained by secondary ion mass spectrometry (SIMS)...
The deposits of electroless nickel-phosphorus fabricated in different process were studied by means of OM, XRD and DTA. Three different kinds of microstructure, such as nano-crystalline, amorphous and co-existence of both, could be obtained by adjusting the process. Moreover, the hardness of the deposit changed according to the different microstructure. The hardness of deposit had a great increasing...
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