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The negative capacitance behavior in light-emitting diodes and laser diodes has been observed and characterized by using ac admittance–voltage method. Experimental results proved that the strong negative capacitance behavior is always accompanied by remarkable light emission. We confirmed that the negative capacitance is an effect of the junction instead of other behavior or measurement error. We...
A novel nondestructive method to characterize a semiconductor diode using admittance–voltage (A–V) measurements at forward bias is presented. For this method, the imaginary and the real part are considered simultaneously to get the accurate parameters of a diode, such as series resistance, junction capacitance, junction voltage and ideality factor at various forward biases. This method can also be...
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