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Since 1990's, the inductively coupled plasmas (ICP) etching system had been introduced into the research and mass production field for applications of optical waveguide process1 and optoelectronic devices fabrication2. In this paper we rep ort our recent works on ICP etching of GaAs in Cl2/Ar/ O2 chemistry. It was found that, in the ICP chemistry, when the Cl2 content set to about 75%, only 7.4% of...
Silicon photonics on unconventional substrates have demonstrated great promise in tremendous unprecedented applications. One challenge is transferring high quality and large scale crystalline silicon nanomembranes onto various substrates. We developed a low temperature nanomembrane transfer technique based on adhesive bonding and deep reactive ion etching. A large area (2 cm 2 cm), 250 nm...
We demonstrate for the first time stamp printing of silicon nanomembrane based photonic devices onto flexible substrate utilizing protection layer and suspended configuration. The propagation loss of the transferred waveguide is ∼1.1dB/cm.
We propose a novel platform for three dimensional photonics. A double layer 1×12 multimode interference coupler is fabricated on a double-bounded Silicon-on-insulator wafer. Optical characterizations confirm low insertion loss and uniform outputs.
We fabricated the single-crystalline Ge (sc-Ge) p-channel thin-film transistors (TFTs) with Schottky-barrier source/drain (S/D) on flexible polyimide substrates by a simplified low-temperature process (≤ 250°C), which preserves the high mobility Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the sc-Ge thin film onto polyimide substrates. The device has a linear...
Micromachined accelerometers were packaged at wafer-level using both via-last and via-first approaches. In the via-last approach, a through-hole etched cap wafer was bonded to a micromachined device wafer using glass frit. Interconnections from the bond pads on the device wafer to the top of the cap wafer were made through the holes using sputter-deposition of metals. The bonded pair was then solder...
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