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Since 1990's, the inductively coupled plasmas (ICP) etching system had been introduced into the research and mass production field for applications of optical waveguide process1 and optoelectronic devices fabrication2. In this paper we rep ort our recent works on ICP etching of GaAs in Cl2/Ar/ O2 chemistry. It was found that, in the ICP chemistry, when the Cl2 content set to about 75%, only 7.4% of...
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