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We report an experimental comparative study of graphene layers produced by micromechanical cleavage of bulk graphite materials of different origins and graphite films obtained by plasma enhanced chemical vapor deposition (PECVD). Structural characteristics of these materials were evaluated using Raman spectroscopy and electron microscopy. Field effect transistors (FETs) based on the PECVD graphene...
We developed a novel method to produce graphene on silicon carbide (SiC) at a temperature as low as 1000°C. The method is based on liquid phase growth (LPG) of graphene mediated by liquid gallium, which acts not only as a flux to store carbon dissolved from a surface of SiC when heated, but also as a catalyst to promote the formation of graphene on SiC when cooled. Our experimental results revealed...
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