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A 400×240 monochromic micro‐LED micro‐display based on GaN vertical‐LED structure is presented. The micro‐display has the pixel pitch of 30 μm and the size of micro‐LEDs is only 8 μm. It is realized by bonding the GaN epi with the pre‐defined anode pad array to the specific pixel driver on the IC backplane, followed by laser lift‐off and ICP etch process to form isolated micro‐LED pixel array. The...
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