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We fabricated amorphous indium gallium zinc oxide thin film transistors (TFTs) in a top gate structure on a glass substrate. We investigated the effect of drain bias on the instability of the device. Although the device showed highly stable characteristics under both positive and negative gate bias stress, it showed significant degradation in the transfer characteristics under drain bias stress. The...
We investigated the stability of amorphous InGaZnO (a-IGZO) thin film transistor (TFT) under pulsed gate bias stress with light illumination, and compared that with DC bias stress. In the case of DC gate bias stress, a-IGZO TFT showed considerable degradation only when the negative gate voltage was applied under light illumination. For the pulsed gate bias stress, we constructed a voltage square wave...
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