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The effects of nitrogen doping on the phase-change performance of Sb-rich Si–Sb–Te materials are systemically investigated, focusing on the chemical state and the role of nitrogen upon crystallization. The tendency of N atoms to bond with Si (SiNx) in the crystalline film is analyzed by X-ray photoelectron spectroscopy. The microstructures of the materials mixed with Sb2Te crystal grains and amorphous...
Upon phase transition, the resistivity changes of Ge 2 Sb 2 Te 5 (GST) and Si 3.5 Sb 2 Te 3 (SST) are proved to be closely related to the variations of band gap and density of localized states. Amorphous SST has a slightly more localized state than amorphous GST; however, the larger band gap of SST material causes relatively difficult phase transition...
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