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The crystallization temperature of superlattice-like GaSb/Sb 2 Te 3 films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb 2 Te 3 layers. The reset operation can be completed by an electric pulse as short as 20ns for the GaSb(4nm)/Sb 2 Te 3 (6nm)-based phase-change memory test cell. This test cell exhibited endurance...
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