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The electrical properties of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions showed excellent linearity. The interface resistance of n-Si/ITO/p-Si junctions was found to be 0.0249 O·cm2, which is the smallest value observed...
We report on the photoresponse of p-Si/n-SiC heterojunctions and the electrical characteristics of SiC/Si hetero-junction bipolar transistors (HBTs), both of which are fabricated by bonding SiC and Si layers. We find that in the photoresponse measurements the square root of the quantum yield almost linearly depends on the photon energy and the absorption edge (1.2 v) is close to the bandgap of Si...
We fabricate InGaP/GaAs/Si hybrid triple-junction (3J) cells with different sheet resistances of bonding layers in Si bottom cells. We estimate resistances across the p-GaAs/n-Si bonding interfaces of the respective 3J cells by measuring the potentials of the bonding layers. We find that the interface resistances are higher in 3J cells with the bonding layers of Si bottom cells with higher sheet resistances.
The possibility of the surface-activated bonding (SAB) technologies for fabricating III-V-on-Si hybrid tandem solar cells is discussed. Although the electrical conduction across the bonding interfaces is influenced by the interface states introduced during the surface-activation process, their impacts are likely to be lowered by combining more heavily-doped bonding layers and the annealing process...
To address the problem of accurate navigation without relying on additional infrastructures, this paper proposes an accurate dual-foot micro-inertial autonomous navigation system. This system consists of two low-cost inertial measurement units (IMUs) and the inertial tracking algorithms. By fusing the foot-mounted inertial tracking results with the empirical stride size as a constraint, the proposed...
InGaP/GaAs/Si hybrid triple-junction cells with 95-nm SiN/65-nm SiO2 bilayer and 75-nm SiN monolayer films as anti-reflection (AR) coatings were investigated. A more marked imbalance in photo currents of subcells was observed in cells with SiN monolayer films. The difference in imbalance was attributed to the optical properties of coatings. The short-circuit currents of the two triple-junction cells...
The effects of annealing process on the electrical properties of n+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I–V) characteristics that the reverse-bias current decreases and activation energy increases with increasing annealing temperature to 700 °C.
A hybrid triple-junction cell was fabricated by surface activated bonding of a lattice-matched invertedly-grown InGaP/GaAs double-junction cell to an ion-implantation-based Si bottom cell. An n+-doped layer on the top of bottom cell due to the ion implantation worked as its emitter and bonding layer for the tunnel junction. The bonding interface was found to be stable after the annealing at 400 °C...
Group-III nitride-on-phosphide hybrid tandem solar cells were fabricated using surface-activated bonding. The bottom surface of nitride top cells grown on GaN substrates was bonded on the top surface of InGaP-based bottom cells grown on n-GaAs substrates. Their tandem-cell operation was successfully demonstrated by confirming that the open-circuit voltage (VOC) of tandem cells was enhanced. It was...
Intelligent public transport vehicular terminal is an important part of intelligent public transportation system. In view of the fact that the municipal transportation structure in our country and status of the public transportation-vehicular equipment, the paper presents a new type of system-design of the intelligent transportation vehicular equipment. System that is based the embedded intelligent...
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