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The reliability of NiPtSi/p-poly Si electrical fuses with different programming mechanisms, i.e. electromigration and thermal rupture, was investigated in terms of fuse resistance stability and fuse array functionality, for 65 nm technology node. The resistance of the fuses programmed within the electromigration programming window, were found to be very stable; resistance shift was only observed on...
Silicon germanium waveguides with losses of less than 1 dB/cm have been fabricated and characterised at 1.32 mu m. Propagation losses are as low as 0.62 dB/cm for TM polarised light and 0.50 dB/cm for TE polarised light.<<ETX>>
Heterojunction p-n-p transistors with SiGe bases have been fabricated. Molecular beam epitaxy (MBE) was used to deposit both Si and SiGe bases, and the emitter was formed by low-temperature epitaxy. The base thickness of the SiGe-base transistor, as measured by secondary ion mass spectrometry, is less than 70 nm. The current gain of the SiGe-base device is 20 at room temperature and increases with...
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